Numerical Analysis of Deposition Rates of Zirconium Thin Films by Thermal Chemical Vapor Deposition
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- NAKAMURA Shizuo
- Industrial Research Institute of Ishikawa
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- HAYASHI Yoshishige
- Department of Chemistry and Chemical Engineering, Faculty of Engineering, Kanazawa University
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- KAWANISHI Takuya
- Department of Chemistry and Chemical Engineering, Faculty of Engineering, Kanazawa University
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- KOMATSU Toshiteru
- Kao Corporation
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- TAKEUCHI Masashi
- Department of Chemistry and Chemical Engineering, Faculty of Engineering, Kanazawa University
Bibliographic Information
- Other Title
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- 熱CVD法によるジルコニア膜合成時の堆積速度の推定
- ネツ CVDホウ ニ ヨル ジルコニア マク ゴウセイジ ノ タイセキ ソクド
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Abstract
Zirconia films were prepared by the CVD method using thermal decomposition of zirconium-tetra-i-propoxide with He gas under 20kPa. The films on the substrate consisted of fine particles less than 1μm and were metastable tetragonal-zirconia. The maximum deposition rate was 6nm/s at 673K and a reactant gas concentration of 0.05mol%. The profile of deposition rate was calculated using a simplified reaction and coagulation model. The calculated results showed a good agreement with the experimental data under the operating conditions of 673K and 0.07mol%. Deposition rates for the system used are estimated with this model.
Journal
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- Journal of the Ceramic Society of Japan
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Journal of the Ceramic Society of Japan 100 (1159), 266-271, 1992
The Ceramic Society of Japan
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Details
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- CRID
- 1390001205278726400
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- NII Article ID
- 110002290170
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- NII Book ID
- AA12312210
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- ISSN
- 18821022
- 09145400
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- NDL BIB ID
- 3758289
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- Data Source
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- JaLC
- IRDB
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed