書誌事項
- タイトル別名
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- Degradation Behavior of PTCR BaTiO<sub>3</sub> in Reducing Gases
- Degradation Behavior of PTCR BaTiO3 in
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Degradation of positive temperature coefficient of resistivity (PTCR) properties of semiconducting BaTiO3 ceramics that were annealed in reducing gases was studied from a mechanistic viewpoint mainly by measuring the electrical and dielectric properties, using reflectance and ESR spectroscopies, as well as by gas analysis using a quadrupole mass spectrometer. The results showed that after annealing, the density of the surface acceptor states decreased whereas the concentration of conduction electrons increased. The degradation in PTCR, properties was assumed to be caused by the diffusion of hydrogen atoms that were formed from reducing gases along the grain boundaries. These atoms reacted with chemisorbed oxygen ions, releasing trapped electrons and lowering the barrier potential.
収録刊行物
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- Journal of the Ceramic Society of Japan (日本セラミックス協会学術論文誌)
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Journal of the Ceramic Society of Japan (日本セラミックス協会学術論文誌) 104 (1216), 1091-1096, 1996
公益社団法人 日本セラミックス協会
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詳細情報 詳細情報について
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- CRID
- 1390001205278948864
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- NII論文ID
- 110002291408
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- NII書誌ID
- AN10040326
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- ISSN
- 18821022
- 09145400
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- NDL書誌ID
- 4087579
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- データソース種別
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- JaLC
- NDL
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- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可