Dependence of Magnetic Damping on Temperature and Crystal Orientation in Epitaxial Fe₄N Thin Films

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  • Isogami S.
    Department of General Education, Fukushima National College of Technology
  • Tsunoda M.
    Department of Electronic Engineering, Tohoku University
  • Oogane M.
    Department of Applied Physics, Tohoku University
  • Sakuma A.
    Department of Applied Physics, Tohoku University
  • Takahashi M.
    The New Industry Creation Hatchery Center, Tohoku University

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  • Dependence of Magnetic Damping on Temperature and Crystal Orientation in Epitaxial Fe<sub>4</sub>N Thin Films

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  In-plane and out-of-plane ferromagnetic resonance (FMR) were used to investigate the intrinsic magnetic damping constant (α) in epitaxial Fe4N thin films deposited on MgO substrates. The dependence of α on temperature was evaluated from room temperature (RT) to 4 K. The external magnetic field (H) of FMR was applied in two directions, i.e., [100] and [110], of the Fe4N lattice. Anisotropic α was observed from RT to 4 K. Moreover, the α for H // [100] exceeded the α for H // [110] at 180 K. Numerical calculations of α for bulk Fe4N revealed the same behavior as that in the experiments. The temperature dependence of anisotropic α was explained by the changes in the electronic band structure depending on the directions of magnetization.

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