Deposition of .ALPHA.-Al2O3 films on Ti(C, N)-based cermet substrate by laser chemical vapor deposition using a diode laser
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- YOU Yu
- Institute for Materials Research, Tohoku University
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- ITO Akihiko
- Institute for Materials Research, Tohoku University
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- TU Rong
- Institute for Materials Research, Tohoku University
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- GOTO Takashi
- Institute for Materials Research, Tohoku University
Bibliographic Information
- Other Title
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- Deposition of α-Al2O3 films on Ti(C, N)-based cermet substrate by laser chemical vapor deposition using a diode laser
- Deposition of a Al2O3 films on Ti C N based cermet substrate by laser chemical vapor deposition using a diode laser
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Abstract
α-Al2O3 film was first deposited on Ti(C, N)-based cermet substrate by laser chemical vapor deposition (LCVD) in a CO2–H2 atmosphere. The effects of atmosphere, laser power (PL), total pressure (Ptot) and deposition temperature (Tdep) on the crystal phase and microstructure were investigated. α- and γ-phase mixture film was prepared at Tdep = 833 K. Single phase α-Al2O3 film was obtained at Tdep = 903 K. The surface morphology of α-Al2O3 film changed from a cauliflower-like to a granular-like structure with increasing Tdep and decreasing Ptot. α-Al2O3 film with a well-developed facet structure was obtained at Ptot = 0.6 kPa and Tdep = 933 K.
Journal
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- Journal of the Ceramic Society of Japan
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Journal of the Ceramic Society of Japan 119 (1391), 570-572, 2011
The Ceramic Society of Japan
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Details 詳細情報について
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- CRID
- 1390001205286825216
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- NII Article ID
- 130000784431
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- NII Book ID
- AA12229489
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- ISSN
- 13486535
- 18820743
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- NDL BIB ID
- 11135865
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
- KAKEN
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- Abstract License Flag
- Disallowed