Effect of bottom electrode structure on electrical properties of BaTiO3 thin films fabricated by CSD method
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- SAKAMOTO Naonori
- Department of Materials Science and Chemical Engineering, Shizuoka University
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- YOSHIOKA Haruna
- Department of Materials Science and Chemical Engineering, Shizuoka University
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- SUZUKI Junpei
- Taiyo Yuden Co Ltd, R&D Center
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- SUZUKI Toshimasa
- Taiyo Yuden Co Ltd, R&D Center
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- WAKIYA Naoki
- Department of Materials Science and Chemical Engineering, Shizuoka University
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- SUZUKI Hisao
- Graduate School of Science and Technology, Shizuoka University
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抄録
BaTiO3 (BT) based perovskite films are expected as ferroelectric and piezoelectric materials alternating Pb(Zr,Ti)O3 (PZT) films which involve toxicity of the lead. In the present study, we focus effects of bottom electrode structures on electrical properties of the BT films fabricated by Chemical Solution Deposition (CSD) method. The BT films were fabricated on 1–6 layered LaNiO3 (LNO) bottom electrode on Si or Pt/Ti/SiO2/Si substrate. The dielectric constant of the BT films fabricated on LNO/Pt/Ti/SiO2/Si substrate showed higher values than that on the LNO/Si substrate. The dielectric constant and piezoelectric properties increased with increasing layer numbers of the LNO. The microstructure and crystal structure of the BT films was studied by means of X-ray diffraction, scanning electron microscopy (SEM), and scanning transmission electron microscopy (STEM).
収録刊行物
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- Journal of the Ceramic Society of Japan
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Journal of the Ceramic Society of Japan 118 (1380), 669-673, 2010
公益社団法人 日本セラミックス協会
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詳細情報 詳細情報について
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- CRID
- 1390001205286832512
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- NII論文ID
- 130000304613
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- NII書誌ID
- AA12229489
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- ISSN
- 13486535
- 18820743
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- NDL書誌ID
- 10770706
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可