Effect of step edges on the growth of Pt thin films on oxide single-crystal substrates

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  • SHIOTA Tadashi
    Department of Metallurgy and Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology
  • ITO Hiroki
    Department of Metallurgy and Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology
  • WAKIYA Naoki
    Department of Materials Science and Chemical Engineering, Shizuoka University
  • CROSS Jeffrey
    Department of Metallurgy and Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology
  • SAKURAI Osamu
    Department of Metallurgy and Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology
  • SHINOZAKI Kazuo
    Department of Metallurgy and Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology

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To study the effect of step edges on the growth of Pt thin films on oxide substrates, Pt films were grown on SrTiO3(100), rutile TiO2(100), and Al2O3(11–20) stepped surfaces at 673 and 973 K by pulsed laser deposition. No clear effect due to the step edges on the film growth was found on the SrTiO3 at 673 K. However, the Pt grains were larger in size at the step edges than on the terraces at 973 K. The estimated length of the Pt surface diffusion was longer than the average terrace width at 973 K and shorter at 673 K. Similar growth behavior was also observed on the TiO2 at 973 K, while there was no clear effect caused by the step edges in the case of the Al2O3. The Pt diffusion length was estimated to be longer than the terrace width on the TiO2 and shorter on the Al2O3. The effect of the step edges can therefore be understood by considering the Pt surface diffusion.

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