The influence of metal/perovskite-type oxide interfaces on tunability of thin film capacitors

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  • HORIUCHI Naohiro
    The Graduate School of Science and Engineering, Tokyo Institute of Technology
  • HOSHINA Takuya
    The Graduate School of Science and Engineering, Tokyo Institute of Technology
  • TAKEDA Hiroaki
    The Graduate School of Science and Engineering, Tokyo Institute of Technology
  • TSURUMI Takaaki
    The Graduate School of Science and Engineering, Tokyo Institute of Technology

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We propose a calculation model that can predict the influence of interface on capacitance–voltage characteristics of metal-insulator-metal type thin film capacitor with perovskite type oxide. The simulation could successfully describe the results of capacitance–voltage measurements of the barium strontium titanate thin film capacitors with top electrodes of Pt, Au, and Ag. It is found that the electrode dependent on the tunability is derived from the work function of the electrode metal. The simulation model is base on the Schottky model that can be employed to explain the dielectric properties of metal/perovskite type oxide junction. The modified Schottky model considers the electric field dependence of permittivity and the back flow of electrons from metal to defect states located in the band gap of the perovskite oxide. This flow forms negatively charged space at the interface and affects the electric properties of the thin film capacitors.

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