Structural characterization of epitaxial multiferroic BiFeO3 films grown on SrTiO3 (100) substrates by crystallizing amorphous Bi-Fe-Ox

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  • NAGANUMA Hiroshi
    Department of Applied Physics, Graduate School of Engineering, Tohoku University
  • MIYAZAKI Takamichi
    Department of Instrumental Analysis, Technical Division, School of Engineering, Tohoku University
  • UKACHI Akihiko
    Department of Applied Physics, Graduate School of Engineering, Tohoku University
  • OOGANE Mikihiko
    Department of Applied Physics, Graduate School of Engineering, Tohoku University
  • MIZUKAMI Shigemi
    WPI Advanced Institute for Materials Research, Tohoku University
  • ANDO Yasuo
    Department of Applied Physics, Graduate School of Engineering, Tohoku University

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Amorphous Bi–Fe–Ox films prepared on SrTiO3 (100) substrates using a conventional r.f. magnetron sputtering system were crystallized by post-annealing at 873 K in an atmosphere. Microstructural observations by X-ray diffraction and cross-sectional transmission electron microscopy revealed that the crystallized Bi–Fe–Ox films were well-epitaxially BiFeO3 fabricated without interfacial layer although as-prepared film was amorphous structure with excess Bi. The crystallized BiFeO3 films have fairly epitaxial compatibly ([001](001)BiFeO3 // [001](001)SrTiO3). These results indicate that (1) BiFeO3 has good epitaxial compatibility with SrTiO3 and (2) crystallizing amorphous Bi–Fe–Ox is one possible method that can be used to fabricate high-quality multiferroic barriers for tunnel junctions.

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