Synthesis of particulate InN crystal by the reaction of InCl3 with LiNH2
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- ZHANG Tiansheng
- Environmental and Renewable Energy Systems Division, Graduate School of Engineering, Gifu University
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- KOUYAMA Akira
- Environmental and Renewable Energy Systems Division, Graduate School of Engineering, Gifu University
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- SUGIURA Takashi
- Environmental and Renewable Energy Systems Division, Graduate School of Engineering, Gifu University
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抄録
A method to synthesize indium nitride (InN) crystal by the reaction of InCl3 with LiNH2 under N2 atmosphere was studied. InN was formed at the temperature ranging from 350 to 450°C under 0.1 MPa N2 atmosphere. X-ray diffraction (XRD) pattern and transmission electron microscope (TEM) image indicated that synthesized InN was crystalline powder with a wurtzite structure. Band gap was determined by plotting (αhν)2 vs. hν for direct transition and the value of 0.83 eV was obtained.
収録刊行物
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- Journal of the Ceramic Society of Japan
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Journal of the Ceramic Society of Japan 120 (1397), 25-29, 2012
公益社団法人 日本セラミックス協会
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詳細情報 詳細情報について
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- CRID
- 1390001205287629696
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- NII論文ID
- 130002067684
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- NII書誌ID
- AA12229489
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- ISSN
- 13486535
- 18820743
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- NDL書誌ID
- 023359920
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可