Partial Gap of SDW in Ce(Ru1-xRhx)2Si2

  • Nakano T.
    Department of Physics, Kyushu University Muroran Institute of Technology
  • Murayama S.
    Muroran Institute of Technology
  • Oomi G.
    Department of Physics, Kyushu University

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We measured the resistivities of the heavy fermion SDW Ce(Ru1-xRhx)2Si2 (0.05 ≤ x ≤ 0.33) in a magnetic field up to 4 T. The resistivities of Ce(Ru1-xRhx)2Si2 (0.05 ≤ x ≤ 0.33) showed hump-type anomalies at TN, indicating a gap opening on the Fermi surface due to the Fermi surface nesting. TNs shift to a lower temperature and disappear with incresing magnetic field. We evaluated the ratio of the gapped part σ2p/σp on the Fermi surface and the gap parameter Δ/kB TN of the SDW to be 0.47 and 1.1 for Ce(Ru1-xRhx)2Si2 (x = 0.15), respectively. They are almost independent of the magnetic field, however they decrease as x deviate from 0.15.

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