Basic Study of Electric Field Induced Magnetization Reversal of Multiferroic (Bi<sub>1-x</sub>Ba<sub>x</sub>)FeO<sub>3</sub> Thin Films at Room Temperature for Magnetic Recording Technology

  • Yoshimura S.
    Research Center for Engineering Science, Graduate School of Engineering & Resource Science, Akita University PRESTO, Japan Science and Technology Agency (JST)
  • Sugawara Y.
    Research Center for Engineering Science, Graduate School of Engineering & Resource Science, Akita University
  • Egawa G.
    Research Center for Engineering Science, Graduate School of Engineering & Resource Science, Akita University
  • Saito H.
    Research Center for Engineering Science, Graduate School of Engineering & Resource Science, Akita University

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  • Basic Study of Electric Field Induced Magnetization Reversal of Multiferroic (Bi[1-x]Ba[x])FeO₃ Thin Films at Room Temperature for Magnetic Recording Technology

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<p>  (Bi1-xBax)FeO3 multiferroic thin films with ferromagnetism and ferroelectricity were fabricated and applied to create magnetic recordings using an electric field. The (001)-oriented (Bi1-xBax)FeO3 thin films of which electric polarization direction is perpendicular to the film plane were fabricated onto a non-single-crystalline substrate with a Ta seedlayer / (111)-oriented Pt underlayer at a low substrate temperature of 500 ℃. A very high frequency plasma irradiation was applied during sputtering deposition of (Bi1-xBax)FeO3 to accelerate the crystallization at the low substrate temperature. The fabricated (Bi0.6Ba0.4)FeO3 film exhibited hysteresis curves indicating ferromagnetic and ferroelectric behavior. The saturation magnetization of the film was approximately 60 emu/cm3 and the coercivity was approximately 2.5 kOe, respectively. Magnetic Force Microscopy analysis of the (Bi0.6Ba0.4)FeO3 film confirmed that the magnetization was reversed by applying only a local electric field. The multiferroic film described here is expected to be useful for electric field-driven magnetic devices.</p>

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