Effect of External Magnetic Field on Compact Inductively-coupled Reactive Ion Etching Reactor
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- MOTOMURA Taisei
- Advanced Manufacturing Research Institute, National Institute of Advanced Industrial Science and Technology
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- TAKAHASHI Kazunori
- Department of Electrical Engineering, Tohoku University
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- KASASHIMA Yuji
- Advanced Manufacturing Research Institute, National Institute of Advanced Industrial Science and Technology
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- UESUGI Fumihiko
- Advanced Manufacturing Research Institute, National Institute of Advanced Industrial Science and Technology
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- ANDO Akira
- Department of Electrical Engineering, Tohoku University
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抄録
A compact inductively-coupled plasma etching reactor with inner diameter of 38 mm without diffusion chamber (i.e., chamber diameter of plasma etching area is the same as that of plasma discharge area) has been developed. An external magnetic field, created by a solenoid current of ≳10 A that means magnetic field strength of ≳0.02 T at the center of solenoid coil, can effectively reduce losses of plasma at the chamber wall. At low RF power of around 50 W, a discharge-mode transited from capacitively- to inductively-coupled plasmas, high electron density plasma was generated and the optical emissions of fluorine increased in intensity. In summary, the external magnetic field maintains the high plasma density and the compact reactor for a processing area as small as 10 mm diameter has been demonstrated. The basic etching characteristics were evaluated in the case of a Si wafer masked with a SiO2 film. Typical etching rate of ≳0.3 μm/min was obtained at conditions with a solenoid current of 30 A, a RF power of 500 W, a pulsed plasma discharge with duty ratio of 10%, and a chamber pressure at 0.2 Pa.<br>
収録刊行物
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- Journal of the Vacuum Society of Japan
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Journal of the Vacuum Society of Japan 58 (10), 392-396, 2015
一般社団法人 日本真空学会
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詳細情報 詳細情報について
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- CRID
- 1390001205293824896
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- NII論文ID
- 130005106937
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- NII書誌ID
- AA12298652
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- ISSN
- 18824749
- 18822398
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- NDL書誌ID
- 026810837
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
- KAKEN
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- 抄録ライセンスフラグ
- 使用不可