Development of EUPS for analyzing electronic states of topmost atomic layer

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  • TOMIE Toshihisa
    Changchun University of Science and Technology, People’s Republic of China Nanoelectronics Research Institute, AIST
  • ISHITSUKA Tomoaki
    Nanoelectronics Research Institute, AIST

Bibliographic Information

Other Title
  • 最表面原子層を分析する光電子分光装置EUPS の開発
  • 最表面原子層を分析する光電子分光装置EUPSの開発 : レーザー生成プラズマ光源の実用化技術開発とEUPSが見せる材料最表面の魅力
  • サイヒョウメン ゲンシソウ オ ブンセキ スル コウデンシ ブンコウ ソウチ EUPS ノ カイハツ : レーザー セイセイ プラズマ コウゲン ノ ジツヨウカ ギジュツ カイハツ ト EUPS ガ ミセル ザイリョウ サイヒョウメン ノ ミリョク
  • —レーザー生成プラズマ光源の実用化技術開発とEUPSが見せる材料最表面の魅力 —
  • — Materialization of laser-produced plasma source application and EUPS observed fascinating surface —

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Abstract

A quarter century has passed since the principle of EUPS (extreme UV excited photoelectron spectroscopy) was invented as the most promising application of a laser-produced plasma source. EUPS enables analysis of electronic states of the topmost atomic layer, band bending of semiconductors, estimation of carrier density, and evaluation of electrical conductivity from secondary electron signals. These newly emerged analyses provide useful information for developing catalysts, protective insulators and other materials. These new analyses were born when problems needed to be solved were brought in by users. We can say that EUPS was sophisticated by the needs of users. In this paper we describe the historical background leading to the invention of the principle of EUPS, the selection and development of the component technologies those constitute the EUPS system, and the birth processes of novel analyses those emerged.

Journal

  • Synthesiology

    Synthesiology 9 (4), 216-234, 2016

    National Institute of Advanced Industrial Science and Technology

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