Development of Optical Fiber built-in Type Kelvin Probe —Development of Band Diagram Measurement System—

  • YAGYU Shinjiro
    International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS)
  • YOSHITAKE Michiko
    International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS)
  • CHIKYOW Toyohiro
    International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS)

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  • 光ファイバー内蔵型ケルビンプローブの開発 —バンドダイアグラム測定装置の開発—
  • 光ファイバー内蔵型ケルビンプローブの開発 : バンドダイアグラム測定装置の開発
  • ヒカリファイバー ナイゾウガタ ケルビンプローブ ノ カイハツ : バンドダイアグラム ソクテイ ソウチ ノ カイハツ
  • Development of Optical Fiber built-in Type Kelvin Probe —Development of Band Diagram Measurement System—

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Abstract

  We developed the optical fiber built-in type Kelvin probe, which was combined with the previously developed system. This system can be applied to measure band diagram included fermi level of organic/inorganic semiconductor, and photovoltage. This system is also applied to the wide range environment from ultra-high vacuum to the atmosphere. We demonstrated photovoltage measurement of polycrystalline Si solar cell. Obtained photovoltage was increasing with increasing photon power. As photovoltage is associated with open-circuit voltage, the obtained results are consistent with its trend. This system has a very wide range of applications ranging from band gap science and solar cell evaluation.<br>

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