R&D of SiC semiconductor power devices and strategy towards their practical utilization
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- ARAI Kazuo
- Planning Division, Research and Innovation Promotion Headquaters, AIST
Bibliographic Information
- Other Title
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- ＳｉＣ半導体のパワーデバイス開発と実用化への戦略―新規半導体デバイス開発における産総研の役割―
- － 新規半導体デバイス開発における産総研の役割 －
Abstract
The realization of SiC semiconductor power devices has been highly expected to contribute to energy saving, however, it requires overcoming various technological barriers. AIST has been contributing to this objective for more than 15 years mainly through participation in national projects. Corresponding to the changes of organization of the institute, in this paper, R&D activities for the past years are described in three parts, i.e., 1) the R&D targets, 2) the major issues and strategies for overcoming them and the main results, 3) the evaluation of the validity of the strategies, and lastly, future issues are suggested.
Journal
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- Synthesiology
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Synthesiology 3 (4), 259-271, 2010
National Institute of Advanced Industrial Science and Technology
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Keywords
Details 詳細情報について
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- CRID
- 1390001205294690304
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- NII Article ID
- 130004541125
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- ISSN
- 18827365
- 18826229
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- Text Lang
- ja
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- Data Source
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- JaLC
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed