The Effect of a Buffer Layer on the Electric Properties of InSb Thin Films Grown by Metalorganic Vapor Phase Epitaxy

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  • HOMMA Hideyuki
    Department of Electrical, Electronic and Information Engineering, Kanagawa University
  • ISHII Tatsuya
    Department of Electrical, Electronic and Information Engineering, Kanagawa University
  • YAMAGUCHI Shigeo
    Department of Electrical, Electronic and Information Engineering, Kanagawa University

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  • 有機金属気相成長法ＩｎＳｂ薄膜の電気的特性に与えるバッファ層の影響
  • ユウキ キンゾク キソウ セイチョウホウ InSb ハクマク ノ デンキテキ トクセイ ニ アタエル バッファソウ ノ エイキョウ

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Abstract

  We have studied the thermoelectric properties of InSb thin films. They were prepared by metalorganic vapor phase epitaxy on sapphire substrate using sputtered InAs buffer layer. Substrate temperature during the deposition of InAs buffer layer was changed between 65°C and 250°C. Electrical properties, thermoelectric properties, and crystalline properties of InSb thin films with a InAs buffer were assessed using Hall measurement, Power factor and X-ray diffraction. The power factor of InSb was as high as 2.1×10−4 W/mK2 at a deposition temperature of 150°C of InAs.<br>

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