反射電子顕微鏡法とミクロ4端子プローブによる表面・電気伝導その場計測

  • 籏野 慶佑
    東京農工大学工学府物理システム工学専攻
  • 矢澤 博之
    東京農工大学工学府物理システム工学専攻
  • 箕田 弘喜
    東京農工大学工学府物理システム工学専攻 JST CREST

書誌事項

タイトル別名
  • In-situ Surface Conductivity Measurement by REM-M4PP Method
  • ハンシャ デンシ ケンビキョウホウ ト ミクロ 4 タンシ プローブ ニ ヨル ヒョウメン デンキ デンドウ ソノバ ケイソク

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抄録

  We have developed a surface conductivity measurement system for a UHV electron microscope (UHV-EM). The sample surfaces were prepared in the UHV-EM and their structures were observed in situ by reflection electron microscopy and diffraction (REM-RHEED). After the sample preparation, the samples were cooled down to RT and the conductance measurement was carried out. The Si(111)-7×7 and Si(111)-√3×√3-Ag structures were used as sample surfaces which were prepared on the Si(111) vicinal surface inclined toward the [112] direction by 1°. The resistance of the 7×7 structure is much larger than that of the √3×√3-Ag structure and this is consistent with the previous report. This indicates that we can measure the surface conductivity by using our system.<br>

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