励起状酸素を用いたシリコン低温酸化の大型基板酸化への適用

DOI Web Site 被引用文献2件 参考文献23件

書誌事項

タイトル別名
  • Application of UV-Light Excited Ozone to Large-Sized Si Wafer at Low Temperature
  • レイキジョウ サンソ オ モチイタ シリコン テイオン サンカ ノ オオガタ キバン サンカ エノ テキヨウ

この論文をさがす

抄録

  We have oxidized Si wafer at lower than 200°C using an electronically excited oxygen atom that is generated by the irradiation of UV light to low pressure highly concentrated ozone gas. We used high-pressure mercury lamp, as the light source because it has a strong emission between 210 nm and 300 nm by which ozone is effectively absorbed and photo-excited. SiO2 film formation with its thickness fluctuation of less than 0.2 nm within light-irradiated area has been easily achieved as long as the intensity of the light irradiated to low-pressure ozone is uniform within 10 percent. The SiO2 film thickness is 3.3-4.1 nm at 200°C for 10 min on the 8″Si(100) wafer. By the sample rotation during oxidation process, we could oxidize the SiO2 film homogeneously on the 8″ wafer.<br>   This film can be applied to a buffer layer between deposited film and poly-Si substrate of the gate dielectric film of the low temperature poly-Si thin film transistor.<br>

収録刊行物

被引用文献 (2)*注記

もっと見る

参考文献 (23)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ