Silicon Trench Etching by Electron Cyclotron Resonance Plasma

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  • ENTA Yutaka
    Process Equipment Sales Dept. 3, Hitachi High-Technologies Corporation
  • FURUSE Muneo
    Etching system Design Dept. 2, Hitachi High-Technologies Corporation
  • TAKATA Kazuo
    Etching system Design Dept. 2, Hitachi High-Technologies Corporation
  • TSUTSUMI Takashi
    Process Equipment Sales Dept. 3, Hitachi High-Technologies Corporation

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  • Ｅｌｅｃｔｒｏｎ　Ｃｙｃｌｏｔｒｏｎ　Ｒｅｓｏｎａｎｃｅ　Ｐｌａｓｍａ　を用いたシリコン深掘り技術
  • Electron Cyclotron Resonance Plasma オ モチイタ シリコン フカボリ ギジュツ

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Abstract

  Hitachi High-Technologies released a new dry plasma etcher designated as the Hitachi M-6180 and targeted for deep silicon trench etch. The new Hitachi M-6180 deep trench etcher provides for excellent uniformity, superior trench profiles, and high selectivity. The Hitachi M-6180 is based on an ECR (Electron Cyclotron Resonance) plasma source able to generate a high density (1×1011 cm-3) plasma at 0.01 Pa. The low temperature and low pressure reactions of the Hitachi M-6180 achieve superior trench profiles with no sidewall residue. The clean nature of the Hitachi M-6180 ECR etch chamber allows for Mean Time Between Wet Cleaning (MTBW) that is extremely long and particle levels that are very low.<br>

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