Advances in Deep Silicon Etch Processing Using Bosch Process
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- NOZAWA Yoshiyuki
- Process Department, Micro Technology Division Sumitomo Precision Products Co., Ltd.
Bibliographic Information
- Other Title
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- Bosch型エッチャーによるシリコン深掘り技術
- Boschガタ エッチャー ニ ヨル シリコン フカボリ ギジュツ
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Abstract
Deep Reactive Ion Etching1-3) is well established as a commercial technique for forming Micro-Electro-Mechanical Systems (MEMS) devices. Over the last decade, development work has led to increases in silicon etch rate of an order of magnitude while requirements for etch depth uniformity and profile control have become more stringent as the wafer size has increased from 3 inch up to 200 mm.<br> Many MEMS devices are still etched on 150 mm wafers, while most IC devices requiring Chip Scale Package (CSP) or other processing relating to Advanced Packaging will be manufactured on 200 mm wafers with planned moves to 300 mm wafers in progress or imminent.<br> This paper describes the leading edge technology of Deep Si RIE including high rate etching and Through Silicon Vias (TSVs) hole formation on wafers up to 300 mm in diameter.<br>
Journal
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- Journal of the Vacuum Society of Japan
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Journal of the Vacuum Society of Japan 53 (7), 446-453, 2010
The Vacuum Society of Japan
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Details 詳細情報について
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- CRID
- 1390001205295770240
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- NII Article ID
- 10026525768
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- NII Book ID
- AA12298652
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- ISSN
- 18824749
- 18822398
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- NDL BIB ID
- 10785944
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed