書誌事項
- タイトル別名
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- Memory Characteristics of Filaments in Tiny ReRAM Structure
- ビサイ キャパシタ コウゾウ ニ オケル テイコウ ヘンカ メモリ(ReRAM)ノ フィラメント トクセイ
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抄録
Clarification of memory characteristics of tiny cells is important for practical use of resistive random access memory (ReRAM). However, the limitation of semiconductor micro-fabrication technology hinders to obtain memory characteristics in tiny cell with an area comparable to the size of ReRAM filaments.<br> In this paper, we established a method to prepare a very small memory cell by fabricating ReRAM structure on the tip of the cantilever of atomic force microscope (AFM). We also established a method to avoid the overshoot of set current. As a result, reset current was successfully reduced enough to suppress serious damage to the cantilever.<br> The effective cell size was estimated to be less than φ 10 nm due to electric field concentration at the tip of the cantilever, which was confirmed by an electromagnetic field simulator based on finite element method.<br>
収録刊行物
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- Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｖａｃｕｕｍ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ
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Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｖａｃｕｕｍ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ 56 (5), 176-178, 2013
一般社団法人 日本真空学会
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詳細情報 詳細情報について
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- CRID
- 1390001205296206464
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- NII論文ID
- 10031169379
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- NII書誌ID
- AA12298652
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- BIBCODE
- 2013JVSJ...56..176K
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- COI
- 1:CAS:528:DC%2BC3sXps1Cqs7k%3D
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- ISSN
- 18824749
- 18822398
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- NDL書誌ID
- 024669552
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可