書誌事項
- タイトル別名
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- Growth and Characterization of BaTiO<sub>3</sub> Sputtered Thin Films at Low Temperature by RF Magnetron Sputtering
- RFマグネトロンスパッタリング法によるBaTiO₃薄膜の低温堆積と評価
- RF マグネトロンスパッタリングホウ ニ ヨル BaTiO ₃ ハクマク ノ テイオン タイセキ ト ヒョウカ
- Growth and Characterization of BaTiO3 Sputtered Thin Films at Low Temperature by RF Magnetron Sputtering
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抄録
We deposited BaTiO3 (BTO) thin films on Pt/Ti/SiO2 substrates at the substrate temperatures (Tsub) of 300 and 500℃ in RF magnetron sputtering method, changing sputtering gas flow ratios of oxygen to total gas (R[O2]) and the distances between substrates and targets (dT-S). From the results, we found that the (001)-oriented BTO films were obtained at the low Tsub of 300℃ using the dT-S of 30 mm. The orientation of the BTO films deposited at 300℃ are dependent on the dT-S from 30 mm to 50 mm. The deposition rates of the BTO films at the dT-S of 30 mm were larger than those at 40 and 50 mm. Electrical resistance perpendicular to the substrate in the film deposited at 500℃ was higher than that at 300℃. The Pr and Ec of the film at 500℃ were estimated to be 3.4 μC/cm2 and 63.5 kV/cm, respectively. (001)-oriented BTO films crystallized at low Tsub of 300℃ is obtained by short dT-S, since the short dT-S may supply more materials to the substrates in the plasma where there are many active particles of constituent elements in BTO.<br>
収録刊行物
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- Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｖａｃｕｕｍ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ
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Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｖａｃｕｕｍ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ 56 (10), 417-421, 2013
一般社団法人 日本真空学会
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詳細情報 詳細情報について
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- CRID
- 1390001205296284416
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- NII論文ID
- 10031202144
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- NII書誌ID
- AA12298652
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- BIBCODE
- 2013JVSJ...56..417Y
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- COI
- 1:CAS:528:DC%2BC3sXhvFakt7%2FF
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- ISSN
- 18824749
- 18822398
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- NDL書誌ID
- 024944325
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可