SiC半導体のパワーデバイス開発と実用化への戦略

  • 荒井 和雄
    産業技術総合研究所 イノベーション推進本部イノベーション推進企画部

書誌事項

タイトル別名
  • R&D of SiC semiconductor power devices and strategy towards their practical utilization
  • - The role of AIST in developing new semiconductor devices -

抄録

The realization of SiC semiconductor power devices has been highly expected to contribute to energy saving, however, it requires overcoming various technological barriers. AIST has been contributing to this objective for more than 15 years mainly through participation in national projects. Corresponding to the changes of organization of the institute, in this paper, R&D activities for the past years are described in three parts, i.e., 1) the R&D targets, 2) the major issues and strategies for overcoming them and the main results, 3) the evaluation of the validity of the strategies, and lastly, future issues are suggested.

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詳細情報 詳細情報について

  • CRID
    1390001205299993088
  • NII論文ID
    130004548128
  • DOI
    10.5571/syntheng.3.245
  • ISSN
    18832318
    18830978
  • 本文言語コード
    en
  • データソース種別
    • JaLC
    • Crossref
    • CiNii Articles
  • 抄録ライセンスフラグ
    使用不可

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