R&D of SiC semiconductor power devices and strategy towards their practical utilization

  • ARAI Kazuo
    Planning Division, Research and Innovation Promotion Headquaters, AIST

Bibliographic Information

Other Title
  • SiC半導体のパワーデバイス開発と実用化への戦略
  • - The role of AIST in developing new semiconductor devices -

Abstract

The realization of SiC semiconductor power devices has been highly expected to contribute to energy saving, however, it requires overcoming various technological barriers. AIST has been contributing to this objective for more than 15 years mainly through participation in national projects. Corresponding to the changes of organization of the institute, in this paper, R&D activities for the past years are described in three parts, i.e., 1) the R&D targets, 2) the major issues and strategies for overcoming them and the main results, 3) the evaluation of the validity of the strategies, and lastly, future issues are suggested.

Journal

  • Synthesiology English edition

    Synthesiology English edition 3 (4), 245-258, 2010

    National Institute of Advanced Industrial Science and Technology

Citations (2)*help

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Details 詳細情報について

  • CRID
    1390001205299993088
  • NII Article ID
    130004548128
  • DOI
    10.5571/syntheng.3.245
  • ISSN
    18832318
    18830978
  • Text Lang
    en
  • Data Source
    • JaLC
    • Crossref
    • CiNii Articles
  • Abstract License Flag
    Disallowed

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