書誌事項
- タイトル別名
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- High Temperature Deformation and Dislocation Structure of .ALPHA.-Al2O3 Single Crystals.
- アルファ Al2O3タンケッショウ ノ コウオン ヘンケイ キョドウ ト テンイ コウゾウ
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説明
The structure and glide behavior of basal dislocations in α-Al2O3 single crystals have been studied by high temperature deformation tests and transmission electron microscopy (TEM). Basal slips were dominant in the deformation at 1400°C and edge-type basal dislocations belonging to primary slip system were mainly introduced in the sample. On the other hand, rhombohedral twinning formation frequently took place at 1200°C. It was confirmed by high-resolution electron microscopy (HREM) that the basal dislocation dissociates into two half partial dislocations along the [0001] direction. The two partials were separated with a distance of 4.7nm along the [0001] direction and were located at the nearest neighbor positions along the ‹1120› slip direction. This indicates that the basal dislocation dissociates by self-climb perpendicularly to the basal slip plane, and the stacking fault is formed on the {1120} plane between the two partials. However, the two partials are considered to dissociate on the same basal slip plane during deformation because the basal dislocation with climb dissociation can not glide on the basal slip plane.
収録刊行物
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- 材料
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材料 51 (6), 617-621, 2002
公益社団法人 日本材料学会
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詳細情報 詳細情報について
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- CRID
- 1390001205392660224
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- NII論文ID
- 110002301909
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- NII書誌ID
- AN00096175
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- ISSN
- 18807488
- 05145163
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- NDL書誌ID
- 6189611
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可
