書誌事項
- タイトル別名
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- X-Ray Residual Stress Analysis of Aluminum Nitride Film with c-Axis Orientation on Glass Substrate.
- cジク ハイコウシタ チッカ アルミニウム マク ノ Xセンテキ ザンリュウ
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説明
Crystal structure and residual stresses in AlN films deposited on BLC glass substrates by a magnetron sputtering method were measured by X-ray diffraction method. Deposited AlN films had a columnar structure with its ‹00·1› orientation being perpendicular to the glass substrate. From this structure, the intensity of hk·l diffraction could be measured just only at a particular ψ-angle and, therefore, the so-called sin2ψ method could not be applied for measuring their residual stresses. A new stress analyzing method was proposed in the present investigation instead of the sin2ψ method.<br>Compressive residual stresses were found in the AlN films deposited under the condition of fairly high nitrogen gas pressure, while tensile residual stresses were found under the condition of low gas pressure.
収録刊行物
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- 材料
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材料 42 (472), 90-95, 1993
公益社団法人 日本材料学会
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詳細情報 詳細情報について
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- CRID
- 1390001205393618304
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- NII論文ID
- 110002298851
- 10007126731
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- NII書誌ID
- AN00096175
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- ISSN
- 18807488
- 05145163
- http://id.crossref.org/issn/05145163
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- NDL書誌ID
- 3812144
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDLサーチ
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可