Wettability of Liquid Bi, In and Sn on Surface Fine Crevice Sructure of Laser-Irradiated Solid Iron Substrate

DOI Web Site 5 Citations 4 References
  • FUKUDA Atsushi
    Graduate School of Engineering, Osaka University Mitsubishi Electric Research Laboratory of Manufacturing Converging Technologies
  • SATAKE Yoshikatsu
    Graduate School of Engineering, Osaka University Division of Materials and Manufacturing Science
  • GOTO Hiroki
    Graduate School of Engineering, Osaka University Division of Materials and Manufacturing Science
  • SUZUKI Masanori
    Graduate School of Engineering, Osaka University Division of Materials and Manufacturing Science
  • NAKAMOTO Masashi
    Graduate School of Engineering, Osaka University Anisotropic Design & AM Research Center
  • MATSUMOTO Ryo
    Graduate School of Engineering, Osaka University Division of Materials and Manufacturing Science
  • UTSUNOMIYA Hiroshi
    Graduate School of Engineering, Osaka University Division of Materials and Manufacturing Science
  • TANAKA Toshihiro
    Graduate School of Engineering, Osaka University Division of Materials and Manufacturing Science

Bibliographic Information

Other Title
  • レーザ加工により表面微細構造を作製した鉄基板と液体Bi、In およびSn の濡れ性

Abstract

  We found that the laser irradiated surface of copper substrate becomes fine structure, which we named "surface fine crevice structure". Liquid bismuth on “surface fine crevice structure” of copper substrate occurs “unusual wetting”. In the present work, we investigated the wettability of “surface fine crevice structure” of iron substrate by liquid tin, indium and bismuth. “Unusual wetting”appears on laser irradiated surface of iron substrate in case of liquid indium and tin. Whereas, liquid bismuth does not show “unusual wetting” on laser induced iron surface under the present experimental conditions.

Journal

  • Journal of Smart Processing

    Journal of Smart Processing 5 (2), 153-158, 2016-03-20

    Smart Processing Society for Materials, Environment & Energy (High Temperature Society of Japan)

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