書誌事項
- タイトル別名
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- Sn-W Structure Produced at the Interface Between Sn-3Ag-0.5Cu Solder and Plating Metallization on W Substrate
- Sn-3Ag-0.5Cuハンダ ト W キバン ジョウメッキ メタライズ カイメン ニ セイセイ スル Sn-W コウゾウ
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In this study, we observed the formation of the Sn-W reaction layer at the interface between Sn-3Ag-0.5Cu solder and an electrolesSni-B/Au plated W substrate. This was done by using repair process which was heat treated by replacing new melting solder. As a result, we confirmed that the Sn-W reaction layers are generated by 10 to 20 times solder repairs. This is repeated on the W substrate with Ni-B at 533K, getting through to the intermetallic compounds such a Sn-W and Sn-Ni-W-Cu at the interface. The structure was analyzed as two layers namely, a Sn:W=1:1 reaction layer, and a Sn:W=7:3 reaction layer. The Sn-W reaction layer shows excellent properties such as solder repair metallization, and is composed by each Sn grain and W grain, which does not show regular crystal structure. Furthermore, M5 edge EELS spectrum of the Sn-W reaction layer were measured with TEM samples, and the Sn-W bonding was analyzed by electron multiple scattering theory of FEFF8.2 calculation code. It was clarified that the Sn-W bond has more interaction with each other than Ni-W bond and W-W bond.
収録刊行物
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- Journal of Smart Processing
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Journal of Smart Processing 3 (4), 232-239, 2014-07-20
一般社団法人 スマートプロセス学会 (旧高温学会)
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詳細情報 詳細情報について
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- CRID
- 1390001205415667968
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- NII論文ID
- 130005091321
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- NII書誌ID
- AA12553487
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- ISSN
- 21871337
- 2186702X
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- NDL書誌ID
- 025731368
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
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- 使用不可