Effect of Plasma Protection Net on Crystal Orientation and Residual Stress in Sputtered Gallium Nitride Films
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- KUSAKA Kazuya
- Faculty of Engineering, Tokushima University
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- FURUTANI Kouhei
- Tokushima University AISIN AW Co. Ltd.
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- KIKUMA Takuya
- Tokushima University Matsushita Kotobuki Electronics Industries, Ltd.
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- HANABUSA Takao
- Faculty of Engineering, Tokushima University
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- TOMINAGA Kikuo
- Faculty of Engineering, Tokushima University
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説明
X-ray diffraction was carried out in order to investigate crystal orientation and residual stress in gallium nitride (GaN) films deposited on a fused quartz substrate by radio frequency (RF) planar magnetron sputtering with a net to protect against plasma exposure. GaN films were deposited at constant gas pressure, constant input power, and various substrate temperatures. The following results were obtained: (1) GaN film of good crystal orientation can be deposited by RF sputtering; (2) in all films deposited at high substrate temperature, the c-axes of GaN crystals were oriented normal to the substrate surface; (3) crystal orientation was good in films deposited at high substrate temperature Ts>573K, but film deposited at Ts=873K peeled from the substrate; (4) good crystal orientation was attained in films deposited by sputtering with the fine mesh to protect against plasma exposure; (5) compressive residual stress was found in film deposited at low Ts below 573K; (6) compressive residual stress was found in films deposited by RF sputtering with the plasma protection net.
収録刊行物
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- 材料
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材料 51 (12Appendix), 187-192, 2002
公益社団法人 日本材料学会
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詳細情報 詳細情報について
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- CRID
- 1390001205443968512
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- NII論文ID
- 110002284000
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- NII書誌ID
- AA11046472
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- ISSN
- 18807488
- 05145163
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- Crossref
- NDL-Digital
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可