書誌事項
- タイトル別名
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- Growth and Optical Characterizations of InAs-QDs Emitting at 1<i>μ</i>m with a Broadband Spectrum for a Light Source for Biomedical Optical Coherence Tomography
- 生体・医療OCT光源への応用を目指した1μm帯広帯域発光InAs量子ドットの作製と光学評価
- セイタイ ・ イリョウ OCT コウゲン エ ノ オウヨウ オ メザシタ 1mm タイコウタイイキ ハッコウ InAs リョウシ ドット ノ サクセイ ト コウガク ヒョウカ
- Growth and Optical Characterizations of InAs-QDs Emitting at 1^|^#956;m with a Broadband Spectrum for a Light Source for Biomedical Optical Coherence Tomography
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Emission wavelengths of self-assembled InAs quantum dots (QDs) were controlled at around 1.05μm by using the In-flush technique. A rapid annealing (In-flush) process after the growth of the GaAs capping layer, which partially covers the InAs-QDs, reduces the height of the InAs-QDs to the thickness of the capping layer. Using this technique, the emission wavelengths of the QDs were precisely controlled by varying the thickness of the capping GaAs layer. The central emission wavelength was suitably controlled in the range of approximately 0.95-1.22μm. This method enables the realization of a broadband 1.05μm light source with a bandwidth of beyond 200nm via a combination of In-flushed QDs. Such a broadband light source with a wavelength of 1.05μm is applicable to optical coherence tomography (OCT), thereby enabling high resolution and large penetration depth in the OCT images. In addition, we have grown a sample including stacked layers of In-flushed QDs and obtained an emission spectrum with a central peak at 1.09μm and a bandwidth beyond 100nm. These results suggest that an axial resolution of approximately 5μm will be achieved by the use of the light source in OCT.
収録刊行物
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- 材料
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材料 62 (11), 679-682, 2013
公益社団法人 日本材料学会
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詳細情報 詳細情報について
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- CRID
- 1390001205445980544
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- NII論文ID
- 130003384104
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- NII書誌ID
- AN00096175
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- COI
- 1:CAS:528:DC%2BC2cXhsVCgsbg%3D
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- ISSN
- 18807488
- 05145163
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- NDL書誌ID
- 025018141
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
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- 抄録ライセンスフラグ
- 使用不可