The effect of semi-conductor Laser irradiation on K 562 cells analized by Flow Cytometry

DOI

Bibliographic Information

Other Title
  • 半導体レーザーのK-562細胞の細胞動態に及ぼす影響について
  • -FCM解析による検討-

Abstract

To investigate the influence of semi-conductor laser irradiation on K562 cells, we studied the cell cycle analysis using flow cytometry. The percentages of cells in s-phase were significantly increased 25 ± 1.5% and 29.4 ± 0.7% after semi-conductor laser irradiation for 15 sec. in 250 mW and 500 mW, respectively, as compared to 16.5 ± 1.5 of the non-treatment cells. The morphological change of K562 cells after semiconductor laser irradiation was minimal, that is, plasma and nucleic membrane were intact observed under light-microscopy on Cytospin specimen. We also evaluated the cell proliferation after semi-conductor laser irradiation by 3[H] TdR incorporation assay and found that the proliferation of the cells after semi-conductor laser irradiation for 15 sec. in 500 mW showed more proliferation than other series.

Journal

  • Nippon Laser Igakkaishi

    Nippon Laser Igakkaishi 13 (Supplement), 267-269, 1992

    Japan Society for Laser Surgery and Medicine

Details 詳細情報について

  • CRID
    1390001205454036864
  • NII Article ID
    130004630264
  • DOI
    10.2530/jslsm1980.13.supplement_267
  • ISSN
    02886200
  • Text Lang
    ja
  • Data Source
    • JaLC
    • Crossref
    • CiNii Articles
  • Abstract License Flag
    Disallowed

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