The effect of semi-conductor Laser irradiation on K 562 cells analized by Flow Cytometry
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- Hayakawa Akemi
- The Equipment Center for Research and Education
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- Tsunekawa Hiroshi
- Nagoya Laser Medicine Laboratory
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- Kuroiwa Atsuo
- The First Department of Internal Medicine
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- Nakashima Izumi
- The First Department of Internal Medicine
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- Morise Kimitomo
- The Equipment Center for Research and Education
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- Tajiri Hisao
- The Department of Immunology
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- 大工園 則雄
- (株) SLT.ジャパン
Bibliographic Information
- Other Title
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- 半導体レーザーのK-562細胞の細胞動態に及ぼす影響について
- -FCM解析による検討-
Abstract
To investigate the influence of semi-conductor laser irradiation on K562 cells, we studied the cell cycle analysis using flow cytometry. The percentages of cells in s-phase were significantly increased 25 ± 1.5% and 29.4 ± 0.7% after semi-conductor laser irradiation for 15 sec. in 250 mW and 500 mW, respectively, as compared to 16.5 ± 1.5 of the non-treatment cells. The morphological change of K562 cells after semiconductor laser irradiation was minimal, that is, plasma and nucleic membrane were intact observed under light-microscopy on Cytospin specimen. We also evaluated the cell proliferation after semi-conductor laser irradiation by 3[H] TdR incorporation assay and found that the proliferation of the cells after semi-conductor laser irradiation for 15 sec. in 500 mW showed more proliferation than other series.
Journal
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- Nippon Laser Igakkaishi
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Nippon Laser Igakkaishi 13 (Supplement), 267-269, 1992
Japan Society for Laser Surgery and Medicine
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Details 詳細情報について
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- CRID
- 1390001205454036864
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- NII Article ID
- 130004630264
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- ISSN
- 02886200
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- Text Lang
- ja
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- Data Source
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- JaLC
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed