Electrical and Optical Properties of GaNAs/GaAs MQW p-i-n Junction

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We have investigated the electrical and optical properties of p-i-n junction structures in which un-doped GaNAs/GaAs multiple quantum wells(MQWs) were sandwiched by p- and n-doped GaAs layers. The samples were formed on the GaAs(001) substrates by plasma assisted molecular beam epitaxy(RF-MBE) using modulated N radical beam method. We have prepared several samples for various GaNAs MQW structures. As the results of I-V characterizations, it is found that threshold voltages of the p-i-n junctions were lowered by insertion of the GaNAs/GaAs MQWs i-layers. The photovoltaic effects were also observed under 1SUN by solar simulator. The conversion efficiency was slightly improved by insertion of the GaNAs/GaAs MQWs, which was confirmed by photo current measurements.

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