Use of LiF to Achieve a Low-Temperature Co-Fired Ceramics (LTCC) with Low Dielectric Loss
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- YOKOI Atsushi
- Faculty of Science and Technology, Meijo University
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- OGAWA Hirotaka
- Faculty of Science and Technology, Meijo University
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- KAN Akinori
- Faculty of Science and Technology, Meijo University
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- OHSATO Hitoshi
- Department of Materials Science and Engineering, Nagoya Institute of Technology
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- HIGASHIDA Yutaka
- Japan Fine Ceramics Center
抄録
The effects of LiF doping on the sintering temperature and microwave dielectric properties of Mg4Nb2O9 (MN) ceramics have been investigated by using a field emission scanning electron microscopy (FE-SEM), X-ray powder diffraction (XRPD), and network analyzer. It was found that the addition of LiF (1.0-10 wt%) to MN is effective in reducing the sintering temperature. The microwave dielectric properties of MN-3.0 wt% LiF sintered at 850°C for 10 h have the dielectric constant (εr) of 12.6, the quality factor (Q•f) of 103607 GHz and the temperature coefficient of resonant frequency (τf) of -70.5 ppm/°C. The bulk densities of MN with 3.0 wt% LiF were noticeably improved at the sintering temperature of around 850°C; the value was 4.186 g/cm3 which was nearly equal to that of MN without LiF sintered at 1350°C. As for the chemical compatibility of MN-3.0 wt% LiF with Ag, the XRPD of the mixtures of MN-3.0 wt% LiF and Ag heat-treated at 920°C for 10 h did not show the evidence of the secondary phase. Thus, it was considered that the MN-xwt% LiF ceramics are applicable to the multilayer devices with silver as a electrode.
収録刊行物
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- Journal of the Ceramic Society of Japan, Supplement
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Journal of the Ceramic Society of Japan, Supplement 112 (0), S1633-S1636, 2004
公益社団法人 日本セラミックス協会
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詳細情報 詳細情報について
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- CRID
- 1390001205523914624
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- NII論文ID
- 130004610151
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- ISSN
- 13492756
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可