Fabrication of low loss Si-N thin films in visible wavelength region

DOI

Bibliographic Information

Other Title
  • 可視域で低損失なシリコンナイトライド薄膜の作製

Description

SiN thin films were deposited by PECVD method using trisdimethylaminosilane (TDMAS) for the raw material. The lowest transmission loss of the slab waveguide was 1.5 dB/cm at 633 nm in wavelength, which was comparable with that of the PECVD film using SiH4.

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Keywords

Details 詳細情報について

  • CRID
    1390001205615699840
  • NII Article ID
    130006972674
  • DOI
    10.14853/pcersj.2006f.0.206.0
  • Text Lang
    ja
  • Data Source
    • JaLC
    • CiNii Articles
  • Abstract License Flag
    Disallowed

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