Development of a Residual Stress Monitoring Sensor for Electronic Devices

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  • ISOBE Koki
    Department of Finemechanics, Graduate School of Engineering, Tohoku University
  • SUZUKI Ken
    Fracture and Reliability Research Institute, Graduate School of Engineering, Tohoku University
  • MIURA Hideo
    Fracture and Reliability Research Institute, Graduate School of Engineering, Tohoku University

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Other Title
  • 電子デバイス内部残留応力モニタリングセンサの開発

Abstract

<p>Recently, it has been also found that the amplitude and distribution of the residual stress vary drastically depending on the size of the element component and their manufacturing process. A fluctuation of the residual stress should degrade the long term reliability and the performance of the devices, therefore, it is important to monitor and control the change of the local residual stress. In this study, a stress sensor which was embedded in a silicon chip was developed by applying piezoresistance effect of single-crystalline silicon. Static and dynamic changes of the stress in a silicon chip were applied by bending beam test and the resistance change of the sensor gauge were monitored. The fabricated stress sensor responded quickly to the change of the local residual stress and a stress sensitivity was about 50 times higher than the most typical metallic strain gauges.</p>

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