1721 ウェハーポリジンクパッド間で発生する諸現象の動的観察および解析(OS1-1 機械工学が支援する微細加工技術I,OS1 機械工学が支援する微細加工技術)

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  • 1721 Observation and analysis on dynamic behavior between a wafer and a polishing pad

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This paper describes how to directly monitor the slurry layer thickness created between the wafer and the polishing pad during Chemical Mechanical Polishing (CMP) process We propose a new method to measure the slurry layer thickness, which is observed directly by Light-section method The measuring error of this proposed method was less than about 3|im in calibration experiments The liquid layer thickness while the polishing pad rotates also was experimentally observed Consequently, the proposed measurement method can be an effective way to directly observe the slurry layer thickness, even if the polishing pad is rotating Finally, we have been a new optical device to observe the region between the wafer and the polishing pad This device can be adjustable pressure applied to the glass substrate and rotational speed of the pad.

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