220402 エバネッセント場を用いたCMPプロセスでの研磨微粒子の挙動の観察(OS16 東京ブロック・山梨ブロック共同企画 機械工学が支援する微細加工技術(半導体・MEMS・NEMS)2(研磨プロセス),オーガナイズド・セッション)

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  • 220402 Observation of fine particles motion during CMP process by evanescent field

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We focused on the fine particles motion being close to polishing surface in the CMP process of SiO_2 film, and then the fine particles motion was observed by evanescent field. In the case of ceria fine particles, the motion close to SiO_2 surface was observed. In the case of silica fine particles, the motion being close to SiO_2 surface was not identified. The cause was in the formation of the hydration layer on the surface by confirming the observation by use of the slurry of Wet/Dry state including the silica fine particles. Next, in the case of ceria fine particles and silica fine particles, the adhesion phenomena of fine particles to the surface were confirmed by FE-SEM observation. It is considered that the adhesion of fine particles to the polishing surface occurs in the CMP process of SiO_2 film.

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