Effect of Oxygen Partial Pressures on the Growth of Oxide Single Crystals by the Floating Zone Method(<Special Issue>Material Transport of Vapor-Liquid Interface during Crystal Growth and Effect on Crystal Quality)

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  • FZ法による酸化物単結晶育成における酸素分圧の影響(<小特集>バルク成長分科会特集 : 結晶成長時における気液界面の物質移動と結晶に与える影響)
  • 解説 FZ法による酸化物単結晶育成における酸素分圧の影響
  • カイセツ FZホウ ニ ヨル サンカブツタンケッショウ イクセイ ニ オケル サンソ ブンアツ ノ エイキョウ

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Abstract

This review deals with effects of oxygen partial pressures on the crystal growth of oxides containing transition elements. Rutile (TiO_2) and chromium-doped forsterite (Cr: Mg_2SiO_4) single crystals are successfully grown by the floating zone method. Rutile single crystals are grown under a low oxygen partial pressure of about 10^3 Pa to avoid the formation of low-angle grain boundaries. Zirconium-doping is effective to grow rutile single crystals without low-angle grain boundaries and bubble inclusions at a high growth rate of 10 mm/h under a high oxygen partial pressure of 10^5 Pa. Cr^<4+>-rich Cr: Mg_2SiO_4 single crystals are grown under a high oxygen partial pressure of 1-2 10^5 Pa, which can not be realized in the conventional Czochralski method using an iridium crucible.

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