Site and Shape Control of III-V Semiconductor Quantum Dots(<Special Issue>Nanocrystals)

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  • III-V族半導体量子ドットの配列・形状制御(<小特集>ナノ結晶)
  • 解説 3-5族半導体量子ドットの配列・形状制御
  • カイセツ 3 5ゾク ハンドウタイ リョウシ ドット ノ ハイレツ ケイジョウ セイギョ

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Abstract

Nano-probe assisted techniques for site-controlled quantum dots (SCQDs) with a nm-level site precision have been developed for suppression of dot-size fluctuation, thus achieving an excellent optical device performance such as femtosecond-level optical switching. An SCQD was first demonstrated by using an in situ EB (electron beam) process combined to a self assembled (S-K mode InAs/GaAs epitaxy. A two-dimensional sub-pm-pitch array of InAs SCQDS with sub-100 nm diameters was successfully formed. Existence of partially missing SCQDS was suppressed by a new technique of sulfur passivation prior to the S-K mode epitaxy. The site precision of the SCQD was drastically improved to a nm level for the first time by using an in situ STM scanning tunneling microscope probe technique. Implementation of an array-pitch and dotdiameter reduction to several tens nm by this technique was attributed to novel nano-deposit and nano-hole formation processes. As a novel technique for a shape-control of QDs, height-control of InAs quantum dots on GaAs surfaces by in-situ AsBr_3 etching and MBE was also introduced and results at the preliminary experiment have been described. This work was supported by NEDO within the framework of the Femtosescond Technology Project.

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