Large lateral growth rate in GaN grown directly on sapphire substrate by two-flow metalorganic vapor phase epitaxy
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- Morimoto K.
- RIAST Osaka Prefecture Univ.
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- Natsume A.
- RIAST Osaka Prefecture Univ.
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- Inoue N.
- RIAST Osaka Prefecture Univ.
Bibliographic Information
- Other Title
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- ツーフロー型有機金属気相成長法を用いたサファイア基板上へのGaN直接成長における大きな横方向成長速度 : エピタキシャル成長I
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Abstract
The inclination of subflow tube gives a large influence on the lateral growth rate of GaN. Under the optimum inclination, the reactant gas stays long on the substrate surface , which leads to the efficient decomposition of NH_3, and drains out on the substrate to all directions, which promotes both the lateral and vertical growth rate.
Journal
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- Journal of the Japanese Association for Crystal Growth
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Journal of the Japanese Association for Crystal Growth 27 (1), 24-, 2000
The Japanese Association for Crystal Growth
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Details 詳細情報について
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- CRID
- 1390001205862910208
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- NII Article ID
- 110002715243
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- NII Book ID
- AN00188386
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- ISSN
- 21878366
- 03856275
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- Text Lang
- ja
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- Data Source
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- JaLC
- CiNii Articles
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- Abstract License Flag
- Disallowed