Large lateral growth rate in GaN grown directly on sapphire substrate by two-flow metalorganic vapor phase epitaxy

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Bibliographic Information

Other Title
  • ツーフロー型有機金属気相成長法を用いたサファイア基板上へのGaN直接成長における大きな横方向成長速度 : エピタキシャル成長I

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Abstract

The inclination of subflow tube gives a large influence on the lateral growth rate of GaN. Under the optimum inclination, the reactant gas stays long on the substrate surface , which leads to the efficient decomposition of NH_3, and drains out on the substrate to all directions, which promotes both the lateral and vertical growth rate.

Journal

Details 詳細情報について

  • CRID
    1390001205862910208
  • NII Article ID
    110002715243
  • NII Book ID
    AN00188386
  • DOI
    10.19009/jjacg.27.1_24
  • ISSN
    21878366
    03856275
  • Text Lang
    ja
  • Data Source
    • JaLC
    • CiNii Articles
  • Abstract License Flag
    Disallowed

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