Lattice Strain and Interface Properties of ZnSe-Based Heteroepitaxial Crystals (<Special Issue> Bulk Crystal Growth(II))
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- Matsumoto Takashi
- Department of Electronic Engineering, Yamanashi University
Bibliographic Information
- Other Title
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- ZnSe系ヘテロエピタキシャル結晶の格子歪と界面特性(<特集>バルク結晶の成長(II))
- ZnSe系ヘテロエピタキシャル結晶の格子歪と界面特性
- ZnSeケイ ヘテロエピタキシャル ケッショウ ノ コウシ ヒズミ ト カイメ
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Description
ZnSe-based heteroepitaxial crystals are grown on III-V substrates, mainly on GaAs, because II-VI wafers with high quality and large area are hardly obtained. The heteroepitaxial crystals include two-dimensional elastic strains due to mismatches of lattice constant and thermal expansion coefficient. The strains in ZnSe layers on GaAs substrate measured with X-ray diffraction are described as a function of temperature for different layer thicknesses. The stress at the heterointerface is also estimated from energy shift of Cr^<2+> luminescence in GaAs substrate. The two-dimensional strain changes symmetry of the crystal lattice and energy band structure. The band structure of strained layers are studied by low-temperature reflectance spectra. The electrical properties of ZnSe/GaAs hetero-interface and influences of substrate-surface treatment are also discussed.
Journal
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- Journal of the Japanese Association for Crystal Growth
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Journal of the Japanese Association for Crystal Growth 22 (1), 31-38, 1995
The Japanese Association for Crystal Growth
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Details 詳細情報について
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- CRID
- 1390001205863674368
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- NII Article ID
- 110002714405
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- NII Book ID
- AN00188386
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- ISSN
- 21878366
- 03856275
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- NDL BIB ID
- 3609569
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- CiNii Articles
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- Abstract License Flag
- Disallowed