Advanced Czochralski Single Silicon Crystal Growth : Silicon(<Special Issue>Bulk Crystals for Human Activity in the New Millennium)
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- Park Jea-Gun
- Advanced Semiconductor Material & Device Development Center, Hanyang University
Bibliographic Information
- Other Title
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- Advanced Czochralski Single Silicon Crystal Growth
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Abstract
Pure silicon wafers are free of COPs, oxidation induced stacking fault ring, and interstitial silicon dislocation loops. Pure silicon single crystal ingot can be grown with satisfying 0.213<V/G<0.219 mm^2 min^<-1>K^<-1> along radi-al and axial direction of crystal growth using CZ crystal growth method. Nitrogen doping during the crystal growth of pure silicon ingot changes vacancy-rich region to abnormal oxygen precipitate region via the reaction between interstitial nitrogen and vacancy. In addition, nitrogen doping does not change the pull rate margin of pure silicon ingot growth.
Journal
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- Journal of the Japanese Association for Crystal Growth
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Journal of the Japanese Association for Crystal Growth 27 (2), 14-21, 2000
The Japanese Association for Crystal Growth
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Details 詳細情報について
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- CRID
- 1390001205863894528
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- NII Article ID
- 110002715394
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- NII Book ID
- AN00188386
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- ISSN
- 21878366
- 03856275
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- NDL BIB ID
- 5458520
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- CiNii Articles
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- Abstract License Flag
- Disallowed