化学溶液法による強誘電体薄膜の合成 : 不揮発性メモリへの応用を踏まえて(<小特集>化学的方法による機能性酸化物膜の合成)

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  • Synthesis of Ferroelectric Thin Films by Chemical Solution Deposition : In Consideration of Application to Non-Volatile Memories(<Special Issue>Synthesis of Functional Oxide Films through Chemical Method)
  • 化学溶液法による強誘電体薄膜の合成--不揮発性メモリへの応用を踏まえて
  • カガク ヨウエキホウ ニ ヨル キョウ ユウデンタイ ハクマク ノ ゴウセイ フキハツセイ メモリ エ ノ オウヨウ オ フマエテ

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Thin films of ferroelectric compounds such as Bi-based layer-structured perovskite (SrBi_2Ta_2O_9, CaBi_2Ta_2O_9, and BaBi_2Ta_2O_9) and Sr_2Nb_2O_7 family (Sr_2Nb_2O_7, Sr_2 Ta_2O_7, and Sr_2(Ta, Nb)_2O_7) were synthesized by using structure-controlled precursor solutions. Low temperature crystallization of the Bi-based layer-structured perovskite thin films was attained and the technique would be applied to fabrication of ferroelectric non-volatile memories . The Sr_2Nb_2O_7-family thin films exhibiting the relatively low dielectric constants have been considered to be good candi-dates for the memories with MFMIS (metal-ferroelectric-metal-insulator-semiconductor) structure. However, some crystallographic properties were clarified to imply the difficulty of the application.

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