書誌事項
- タイトル別名
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- Growth of Oxide Crystals Thin Films through Sol-Gel Method : KTN Epitaxy Film (<Special Issue> Epitaxial Growth of Oxides
- ゾルーゲル法による酸化物結晶薄膜の成長--KTNエピタキシー膜
- ゾル ゲルホウ ニヨル サンカブツ ケッショウ ハクマク ノ セイチョウ KT
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The sol-gel method is one of the promissing methods to synthesize the well-defined films. In this article, the key processing parameters are introduced to prepare the epitaxial oxide film of K(Ta, Nb)O_3 as an example Epitaxial potassium tantalate-niobate (KTa_xNb_<1-x>O_3, KTN) thin films could be synthesized through reaction control of metal alkoxide solution. The structure of KTN precursors in solution was analyzed by NMR spectroscopy. The KTN precursor consists of K[Nb(OEt)_6]and K[Ta(OEt)_6]with a molecular level interaction in ethanol. Staring metal alkoxides including metal-oxygen-carbon bonds were found to undergo bond rearrangement, yielding KTN precursors under the controlled reaction conditions. Perovskite KTN films crystallized on MgO(100) substrates using H_20/0_2 vapor treatment at 300℃ followed by crystallization at 675℃. KTN films on Pt(100)/MgO(100) of perovskite phase also crystallized at 700℃. KTN films were confirmed to have an epitaxy on Pt(100)/MgO(100) substrates by X-ray pole figure analysis. KTa_<0.65>Nb_<0.35>0_3 films on Pt(100)/MgO(100) substrates showed P-E hysteresis at 225K. The Curie temperature of the KTa_<0.65>Nb_<0.35>0_3 film was 310 K.
収録刊行物
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- 日本結晶成長学会誌
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日本結晶成長学会誌 22 (5), 388-394, 1995
日本結晶成長学会
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詳細情報 詳細情報について
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- CRID
- 1390001205864525056
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- NII論文ID
- 110002714576
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- NII書誌ID
- AN00188386
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- ISSN
- 21878366
- 03856275
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- NDL書誌ID
- 3924740
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可