On the Measurements of Surface Tension of Molten Silicon : in Relation to the Controlof Oxygen Partial Pressure(<Special Issue> New Approaches for Bulk Cristal Growth)

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  • Mukai K
    Department of Materials Science and Engineering, Faculty of Engineering, Kyushu Institute of Technology
  • Niu Z
    Department of Materials Science and Engineering, Faculty of Engineering, Kyushu Institute of Technology

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Other Title
  • シリコン融液の表面張力測定 : 気相の酸素分圧制御を中心として(<小特集>バルク結晶成長の新しいアプローチ)
  • シリコン融液の表面張力測定--気相の酸素分圧制御を中心として
  • シリコン ユウエキ ノ ヒョウメン チョウリョク ソクテイ キソウ ノ サンソ

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Previous studies on the measurements of surface tension of molten silicon containing our recent results were critically reviewed as follows: 1) brief discussions based on the Keene's review on the reported literature values of surface tension σ and its temperature coefficient dσ/dT mainly in relation to the effect of impurities, especially oxygen, by the contamination during the measurements of σ and dσ/dT, 2) short introduction and comments on the various methods for the surface tension measurement reported after the publication of Keene's review, 3) thermodynamic feature of the molten silicon-gas system concerning the relation between partial pressure P_<o2> of oxygen and SiO, and also the relation between oxygen concentration in the silicon and P_<o2>, etc., based on our results, 4) treatment of oxygen in the system for the surface tension measurements, for examples, the method and apparatus for controlling P_<o2> of the system and the quantitative influence of oxygen on σ and dσ/dT, which were obtained by our study.

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