薄膜のモフォロジーと原子反応の素過程(<小特集>エピタキシャル成長の量子論)

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タイトル別名
  • Elementary Atomic Reactions and Thin Film Morphology(<Special Issue> Quantum Mechanical Approach to Epitaxial Growth)
  • 薄膜のモフォロジーと原子反応の素過程
  • ハクマク ノ モフォロジー ト ゲンシ ハンノウ ノ ソカテイ

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説明

A review is given on the first-principle total-energy electronic-structure calculations which clarify roles of energetics and kinetics in atomic reactions at the initial stage of semiconductor epiaxial growth. It is demonstrated that the bunching of double-layer steps on Si (100) leads to the {311} facet which is commonly observed in epitaxial grpwth on the surface. It is emphasized that microscopic atomic structures at the initial stages crucially affect the morphology of the resulting overlayers.

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