書誌事項
- タイトル別名
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- Recent Studies on GaN Single Crystal Growth using a Na Flux(<Special Issue>On the Advanced Control Techniques of Crystal Growth Using Seed Crystals or Nuclei)
- 解説 最近のNaフラックスを用いたGaN単結晶育成に関する研究
- カイセツ サイキン ノ Na フラックス オ モチイタ GaNタンケッショウ イクセイ ニ カンスル ケンキュウ
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Studies on the Na flux method for GaN single crystal growth were reviewed. Platelet single crystals of hexagonal wurtzite-type GaN (h-GaN) with a size of about 1 mm were obtained at 650-850'C in a stainless-steel sealed tube using NaN_3 as a source of Na and N_2. A mixture of h-GaN and cubic zinc-blend-type GaN (c-GaN) grains was precipitated at the bottom of a BN crucible at 570℃. Platelet h-GaN single crystals with a size over 5 mm in the longest direction grew at 750℃ and a constant N_2 pressure of 5 MPa for 200-450 h by introducing N_2 from the outside of a stainless steel container. Colorless transparent prismatic h-GaN single crystals of about 1 mm were obtained at a lower Na content in the starting Na-Ga melt. A carrier concentration n-type of 1-2×10^<18>cm^<-3> and a mobility of 100 cm^2 V^<-1>s^<-1> were measured at room temperature for platelet crystals of about I mm. The full-width at half-maximum (FWHM) of the rocking curve measured for 0004 X-ray diffraction peak was 25-32 arcsec.
収録刊行物
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- 日本結晶成長学会誌
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日本結晶成長学会誌 28 (5), 316-321, 2001
日本結晶成長学会
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詳細情報 詳細情報について
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- CRID
- 1390001205896183936
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- NII論文ID
- 110002715509
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- NII書誌ID
- AN00188386
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- ISSN
- 21878366
- 03856275
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- NDL書誌ID
- 6020592
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可