書誌事項
- タイトル別名
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- Growth of Silicon Film for TFTS on Glass Substrate by Using Laser Crystallization(<Special Issue>On the Advanced Control Techniques of Crystal Growth Using Seed Crystals or Nuclei)
- レーザ結晶化法によるTFT用Si結晶の成長技術
- レーザ ケッショウカホウ ニ ヨル TFTヨウ Si ケッショウ ノ セイチョウ ギジュツ
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High performance silicon (Si) thin film transistors (TFTs) on non-alkali glass substrate will be key to achieving a system on glass (SOG). However, it is very diflicult to form high performance Si devices on glass substrate, because glass is an amorphous materials and its deformation temperature is low: 600℃. Excimer laser crystallization is a useful technique for forming high-quality Si film on glass substrate. However, the obtained Si film is a polycrystalline material with small grains and the reproducibly obtained mobility of TFT is about 150 cm^2/V・s. This value is insufficient to achieve a SOG. We thus need a singlecrystalline-Si film on glass substrate. Since TFTS are positioned at different sites on glass substrate and it is very difficult to form single-crystalline-Si over a wide area, a self-aligned formation of single-crystalline-Si in the channel regions of the TFTS is necessary. In this paper, we propose new Si growth methods to achieve self-aligned formation of single-crystalline-Si in the channel region of TFTS on glass substrate.
収録刊行物
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- 日本結晶成長学会誌
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日本結晶成長学会誌 28 (5), 306-315, 2001
日本結晶成長学会
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詳細情報 詳細情報について
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- CRID
- 1390001205896191744
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- NII論文ID
- 110002715508
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- NII書誌ID
- AN00188386
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- ISSN
- 21878366
- 03856275
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- NDL書誌ID
- 6020586
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可