New development of nuclear generation control technique using a stirring in the Na flux method
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- Imabayashi Hiroki
- Graduate School of Engineering, Osaka University
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- Murakami Kosuke
- Graduate School of Engineering, Osaka University
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- Matsuo Daisuke
- Graduate School of Engineering, Osaka University
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- Honjo Masatomo
- Graduate School of Engineering, Osaka University
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- Imanishi Masayuki
- Graduate School of Engineering, Osaka University
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- Maruyama Mihoko
- Graduate School of Engineering, Osaka University
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- Imade Mamoru
- Graduate School of Engineering, Osaka University
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- Yoshimura Masashi
- Graduate School of Engineering, Osaka University
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- Mori Yusuke
- Graduate School of Engineering, Osaka University
Bibliographic Information
- Other Title
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- Naフラックス法における撹拌を用いた核発生制御技術の新展開
- Naフラックス法における撹拌を用いた核発生制御技術の新展開 : 高品質窒化ガリウム多結晶体作製への応用
- Na フラックスホウ ニ オケル カクハン オ モチイタ カク ハッセイ セイギョ ギジュツ ノ シン テンカイ : コウヒンシツ チッカ ガリウム タケッショウタイ サクセイ エ ノ オウヨウ
- ~高品質窒化ガリウム多結晶体作製への応用~
- - Application for preparation of high-quality gallium nitride polycrystals -
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Abstract
<p> Suppression techniques of the GaN crystal nucleation in the Na flux method has become an important technique for establishing a high-quality GaN single crystal growth technology. By technologies capable of promoting GaN crystal nucleation is developed, Na flux method allows application to fabrication of GaN polycrystals as well as bulk GaN single crystal.</p><p> We report on the high-density aggregation of GaN polycrystals, fabricated using the Na flux method under continuous propeller stirring. It is seen from the XRD profile that the aggregation of GaN polycrystals was randomly directed when grown under continuous stirring conditions using propeller at 100 rpm. The relative bulk density and real density of the aggregation of polycrystals content to the density of the bulk GaN crystal were 92.1% and 98.4%, respectively. It is noted that the use of a propeller for continuous stirring in the Na flux method has the possibility of fabricating a high-quality raw materials for various methods of GaN-based materials.</p>
Journal
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- Journal of the Japanese Association for Crystal Growth
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Journal of the Japanese Association for Crystal Growth 43 (4), 239-243, 2016
The Japanese Association for Crystal Growth
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Details 詳細情報について
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- CRID
- 1390001205896200320
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- NII Article ID
- 130005997203
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- NII Book ID
- AA12677650
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- ISSN
- 21887268
- 21878366
- 03856275
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- NDL BIB ID
- 027922058
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- CiNii Articles
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- Abstract License Flag
- Disallowed