Quantum Mechanical Approach for Elementary Processes of Epitaxial Growth(<Special Topic>How Do We Model Crystal Growth Phenomena?)
-
- Akiyama Toru
- Department of Physics Engineering, Mie University
-
- Nakamura Kohji
- Department of Physics Engineering, Mie University
-
- Ito Tomonori
- Department of Physics Engineering, Mie University
Bibliographic Information
- Other Title
-
- エピタキシャル成長素過程への量子論的アプローチ(<特集>どのように結晶成長現象をモデル化するか?)
- エピタキシャル成長素過程への量子論的アプローチ
- エピタキシャル セイチョウソ カテイ エ ノ リョウシロンテキ アプローチ
Search this article
Abstract
Recent progress in computing power and computational physics techniques enables us to clarify epitaxial growth processes by performing first-principles calculations which only requires atomic numbers as computational parameters. Here, we review recent theoretical studies based on first-principles calculations and present its versatility to clarify elementary processes of epitaxial growth in atomic scale. The simulation methods based on quantum mechanical approach and its applications to clarify dynamical processes of epitaxial growth are also presented.
Journal
-
- Journal of the Japanese Association for Crystal Growth
-
Journal of the Japanese Association for Crystal Growth 38 (2), 137-143, 2011
The Japanese Association for Crystal Growth
- Tweet
Details 詳細情報について
-
- CRID
- 1390001205896328064
-
- NII Article ID
- 110008686951
-
- NII Book ID
- AN00188386
-
- ISSN
- 21878366
- 03856275
-
- NDL BIB ID
- 11196080
-
- Text Lang
- ja
-
- Data Source
-
- JaLC
- NDL
- CiNii Articles
-
- Abstract License Flag
- Disallowed
