Relation between Surface Reconstruction and the Shapes of the Terrace Edges on GaAs(001) Vicinal to (111)B (<Special Issue>Recent Trend of Crystal Growth Theory)

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  • Itoh Makoto
    Computer Center, Gakushuin University:Osaka University

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  • (111)B方向に微傾斜したGaAs(001)表面上における表面再構成構造とテラス端の形状との関係(<小特集>結晶成長理論の最近の動向)
  • 解説 (111)B方向に微傾斜したGaAs(001)表面上における表面再構成構造とテラス端の形状との関係
  • カイセツ 111 B ホウコウ ニ ビケイシャ シタ GaAs 001 ヒョウメン ジョウ ニ オケル ヒョウメン サイコウセイ コウゾウ ト テラス タン ノ ケイジョウ ト ノ カンケイ

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Abstract

The morphologies of the terraces of a GaAs(001)-β2 (2×4) surface vicinal to (111) B in the homoepitaxial growth condition are studied by the kinetic Monte Carlo simulations. The growth simulations revealed that the morphologies of these terraces depend on the relative phase of the β2 (2×4) reconstruction between an upper terrace and a lower one. In addition, this effect leads to the growth asymmetry of a two-dimensional island. These results are in agreement with the scanning tunneling microscopy images reported in the literature.

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